Invention Grant
- Patent Title: Polysilicon design for replacement gate technology
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Application No.: US16557423Application Date: 2019-08-30
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Publication No.: US10658492B2Publication Date: 2020-05-19
- Inventor: Harry-Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/66 ; H01L27/06 ; H01L27/092 ; H01L49/02 ; H01L29/78 ; H01L21/8238 ; H01L27/08
Abstract:
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.
Public/Granted literature
- US20190386116A1 Polysilicon Design for Replacement Gate Technology Public/Granted day:2019-12-19
Information query
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