Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16284012Application Date: 2019-02-25
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Publication No.: US10658467B2Publication Date: 2020-05-19
- Inventor: Yoichi Hori
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2019a71
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L27/08 ; H01L29/06 ; H01L29/16 ; H01L29/868 ; H01L29/43 ; H01L29/41
Abstract:
A semiconductor device of an embodiment includes a silicon carbide layer having a first plane and a second plane; a first silicon carbide region of a first conductivity type in the silicon carbide layer; a second silicon carbide region of a second conductivity type between the first silicon carbide region and the first plane; a third silicon carbide region of the second conductivity type between the first silicon carbide region and the first plane, the third silicon carbide region extending in a first direction parallel to the first plane; a first electrode provided on a side of the first plane; a second electrode provided on a side of the second plane; and a metal silicide layer provided between the first electrode and the second silicon carbide region, the metal silicide layer having a portion being in contact with the first plane, and a shape of the portion being an octagon.
Public/Granted literature
- US20200091298A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
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