To provide a high-speed, large-scale non-volatile skyrmion random access memory that prevents incorrect writing and incorrect erasure, has a circuit with good storage-data sensitivity, generates smaller leakage current, and consumes less power. To provide a magnetic element for generating and erasing a skyrmion including: a first magnetic material thin film in which the skyrmion is generated and erased; a sensing element for sensing the skyrmion; and at least one of a first transistor for selecting the first magnetic material thin film, and a second transistor for selecting the skyrmion sensing element.