Invention Grant
- Patent Title: Semiconductor device including a blocking layer having a varying thickness
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Application No.: US16003763Application Date: 2018-06-08
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Publication No.: US10658376B2Publication Date: 2020-05-19
- Inventor: Ryosuke Sawabe , Shigeru Kinoshita , Kenta Yamada , Hirokazu Ishigaki
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64eb3df9
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/28 ; H01L27/1157 ; H01L21/02 ; H01L29/10 ; H01L29/51 ; H01L21/027 ; H01L21/311 ; H01L21/3213
Abstract:
According to one embodiment, a semiconductor device includes a substrate, a stacked body, and a columnar portion. The stacked body, provided on the substrate, includes first conductive layers and first insulating layers provided alternately along a first direction. The columnar portion extends through the stacked body in the first direction. The columnar portion includes a blocking layer, a charge storage layer, a tunneling layer, and a semiconductor layer. The columnar portion includes a first portion and a second portion. The second portion is provided on the substrate side of the first portion. A dimension in the second direction of the second portion is smaller than a dimension in a second direction of the first portion. A portion of the blocking layer is provided at the second portion being thicker than a portion of the blocking layer provided at the first portion.
Public/Granted literature
- US20180294279A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-10-11
Information query
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