Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15905905Application Date: 2018-02-27
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Publication No.: US10658370B2Publication Date: 2020-05-19
- Inventor: Tetsu Ohtou , Ching-Wei Tsai , Kuan-Lun Cheng , Yasutoshi Okuno , Jiun-Jia Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/088 ; H01L29/10 ; H01L21/8234 ; H01L29/06 ; H01L21/8238 ; H01L27/092
Abstract:
A semiconductor device includes a substrate having a semiconductor fin, in which the semiconductor fin has a first sidewall and a second sidewall opposite to the first sidewall; an epitaxy structure in contact with the first sidewall of the semiconductor fin; and a spacer in contact with the second sidewall of the semiconductor fin and the epitaxy structure.
Public/Granted literature
- US20190006371A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-01-03
Information query
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