Invention Grant
- Patent Title: Semiconductor chip, method for manufacturing semiconductor chip, integrated circuit device, and method for manufacturing integrated circuit device
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Application No.: US15920780Application Date: 2018-03-14
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Publication No.: US10658321B2Publication Date: 2020-05-19
- Inventor: Hidekazu Inoto , Akira Kimitsuka , Takeshi Yamamoto , Mariko Habu , Kanji Osari
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f398481
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78 ; H01L25/065 ; H01L23/482 ; H01L23/485 ; H01L23/488

Abstract:
An integrated circuit device includes a support substrate, a first semiconductor chip and a second semiconductor chip provided on the support substrate, and a connection member made of solder. The first semiconductor chip and the second semiconductor chip each includes a semiconductor substrate, an interconnect layer provided on the semiconductor substrate, and a pad provided on a side surface of the interconnect layer. The connection member contacts a side surface of the pad of the first semiconductor chip and a side surface of the pad of the second semiconductor chip.
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Information query
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