Invention Grant
- Patent Title: FinFET devices and methods of forming
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Application No.: US16230675Application Date: 2018-12-21
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Publication No.: US10658247B2Publication Date: 2020-05-19
- Inventor: Kuo-Cheng Chiang , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/161 ; H01L29/16 ; H01L29/08 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/165
Abstract:
In accordance with some embodiments, a device includes first and second p-type transistors. The first transistor includes a first channel region including a first material of a first fin. The first transistor includes first and second epitaxial source/drain regions each in a respective first recess in the first material and on opposite sides of the first channel region. The first transistor includes a first gate stack on the first channel region. The second transistor includes a second channel region including a second material of a second fin. The second material is a different material from the first material. The second transistor includes third and fourth epitaxial source/drain regions each in a respective second recess in the second material and on opposite sides of the second channel region. The second transistor includes a second gate stack on the second channel region.
Public/Granted literature
- US20190148244A1 FINFET DEVICES AND METHODS OF FORMING Public/Granted day:2019-05-16
Information query
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