Invention Grant
- Patent Title: Semiconductor device and method
-
Application No.: US15368192Application Date: 2016-12-02
-
Publication No.: US10658199B2Publication Date: 2020-05-19
- Inventor: Sih-Hao Liao , Yu-Hsiang Hu , Hung-Jui Kuo , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; C08G73/10 ; C09D179/08 ; H01L21/56 ; H01L23/538
Abstract:
A method of manufacturing a semiconductor device includes placing a polymer raw material mixture over a substrate. The polymer raw material may include a polymer precursor, a photosensitizer, and an additive. The polymer raw material mixture is exposed to radiation to form a dielectric layer and cured at a temperature of between about 150° C. and about 230° C.
Public/Granted literature
- US20180061669A1 Semiconductor Device and Method Public/Granted day:2018-03-01
Information query
IPC分类:
