Invention Grant
- Patent Title: Silicon-based deposition for semiconductor processing
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Application No.: US15244311Application Date: 2016-08-23
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Publication No.: US10658194B2Publication Date: 2020-05-19
- Inventor: Zhongkui Tan , Qing Xu , Qian Fu , Hua Xiang , Lin Zhao
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/32 ; H01L21/311 ; H01L21/3065 ; H01L21/02 ; H01J37/32 ; C23C16/52 ; C23C16/50 ; C23C16/455
Abstract:
A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. A COS containing gas is flowed into the processing chamber. A plasma is formed from the silicon containing gas and the COS containing gas in the processing chamber, wherein the plasma provides the deposition over the substrate.
Public/Granted literature
- US20180061659A1 SILICON-BASED DEPOSITION FOR SEMICONDUCTOR PROCESSING Public/Granted day:2018-03-01
Information query
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