Invention Grant
- Patent Title: Method and apparatus for reducing particle defects in plasma etch chambers
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Application No.: US13174090Application Date: 2011-06-30
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Publication No.: US10658161B2Publication Date: 2020-05-19
- Inventor: Xikun Wang , Andrew Nguyen , Changhun Lee , Xiaoming He , Meihua Shen
- Applicant: Xikun Wang , Andrew Nguyen , Changhun Lee , Xiaoming He , Meihua Shen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01J37/32
Abstract:
In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.
Public/Granted literature
- US20120091095A1 METHOD AND APPARATUS FOR REDUCING PARTICLE DEFECTS IN PLASMA ETCH CHAMBERS Public/Granted day:2012-04-19
Information query
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