Invention Grant
- Patent Title: Exposure apparatus and exposure method, lithography method, and device manufacturing method
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Application No.: US16085142Application Date: 2017-03-14
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Publication No.: US10658157B2Publication Date: 2020-05-19
- Inventor: Yuichi Shibazaki
- Applicant: NIKON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NIKON CORPORATION
- Current Assignee: NIKON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5009c935
- International Application: PCT/JP2017/010249 WO 20170314
- International Announcement: WO2017/159693 WO 20170921
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/317 ; G03F7/20 ; H01L21/027 ; H01J37/302 ; G02B27/09

Abstract:
An exposure apparatus scans a substrate in a Y-axis direction and also adjusts irradiation position of a plurality of beams, based on correction information obtained from the same number of distortion tables as the beams, the distortion tables including information concerning change of irradiation position of the plurality of beams of a multibeam optical system. Especially, the irradiation position of the plurality of beams in the Y-axis direction is adjusted by individually controlling irradiation timing of the plurality of beams irradiated on the substrate from the multibeam optical system.
Public/Granted literature
- US20190074161A1 EXPOSURE APPARATUS AND EXPOSURE METHOD, LITHOGRAPHY METHOD, AND DEVICE MANUFACTURING METHOD Public/Granted day:2019-03-07
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