A non-volatile memory device is provided that uses one or more volatile elements. In some embodiments, the non-volatile memory device can include a resistive two-terminal selector that can be in a low resistive state or a high resistive state depending on the voltage being applied. A MOS (“metal-oxide-semiconductor”) transistor in addition to a capacitor or transistor acting as a capacitor can also be included. A first terminal of the capacitor can be connected to a voltage source, and the second terminal of the capacitor can be connected to the selector device. A floating gate of an NMOS transistor can be connected to the other side of the selector device, and a second NMOS transistor can be connected in series with the first NMOS transistor.