A semiconductor apparatus (100) is provided with: a substrate (1); and a thin-film transistor (10). The thin-film transistor has: an oxide semiconductor layer (11) that includes a channel region (11a) and first and second contact regions (11b, 11c); a gate insulating layer (12) that is provided so as to cover the oxide semiconductor layer; a gate electrode (13) that is provided on the gate insulating layer and that overlaps the channel region via the gate insulating layer; a source electrode (14) that is electrically connected to the first contact region; and a drain electrode (15) that is electrically connected to the second contact region. This semiconductor apparatus is further provided with a light-shielding layer (2) arranged between the oxide semiconductor layer and the substrate, and the channel region is aligned to the part of the light-shielding layer overlapping the oxide semiconductor layer.