Invention Grant
- Patent Title: Perpendicular magnetic tunnel junction retention and endurance improvement
-
Application No.: US15859224Application Date: 2017-12-29
-
Publication No.: US10651370B2Publication Date: 2020-05-12
- Inventor: Mustafa Pinarbasi , Bartlomiej Adam Kardasz , Jorge Vasquez , Thomas D. Boone
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US CA Fremont
- Agency: Zilka-Kotab, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/08 ; G11C11/16 ; H01F10/32 ; H01L43/02 ; H01L27/22 ; H01L43/10

Abstract:
A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic free layer includes a layer of Hf that causes the magnetic free layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves data retention and increases thermal stability, by preventing the magnetization of the magnetic free layer from inadvertently losing its magnetic orientation.
Public/Granted literature
- US20190207096A1 PERPENDICULAR MAGNETIC TUNNEL JUNCTION RETENTION AND ENDURANCE IMPROVEMENT Public/Granted day:2019-07-04
Information query