Invention Grant
- Patent Title: Spin current magnetization reversal element and magnetic memory
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Application No.: US16113592Application Date: 2018-08-27
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Publication No.: US10651366B2Publication Date: 2020-05-12
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1da05f91
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/06 ; G11C11/18 ; H01L43/08 ; G11C11/16 ; H01L27/22 ; H01L43/10 ; H01L43/12

Abstract:
A spin flow magnetization reversal element includes a first ferromagnetic metal layer capable of changing a direction of magnetization; and a spin orbit torque wiring layer joined to the first ferromagnetic metal layer and extending in a direction intersecting a direction perpendicular to a plane of the first ferromagnetic metal layer. The spin orbit torque wiring layer includes at least one light element L among B, C, Si and P and at least one noble gas element among Ar, Kr and Xe.
Public/Granted literature
- US20190074430A1 SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT AND MAGNETIC MEMORY Public/Granted day:2019-03-07
Information query
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