A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2≤x≤4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.