A vertical repetition of a unit layer stack including an insulating layer, a sacrificial material layer, and a nucleation promoter layer is formed over a substrate. Memory stack structures are formed through the vertical repetition. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers and the nucleation promoter layers within the vertical repetition. Electrically conductive layers are formed in the backside recesses by selectively growing a metallic material from physically exposed surfaces of the nucleation promoter layers while suppressing growth of the metallic material from physically exposed surfaces of the insulating layers.