Invention Grant
- Patent Title: Metal zero contact via redundancy on output nodes and inset power rail architecture
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Application No.: US16591102Application Date: 2019-10-02
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Publication No.: US10651164B2Publication Date: 2020-05-12
- Inventor: Richard T. Schultz
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kowert Hood Munyon Rankin and Goetzel PC
- Agent Rory D. Rankin
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8234 ; H01L23/528 ; H01L23/522 ; H01L29/423 ; H01L27/088 ; G06F30/392 ; G06F30/394 ; H01L29/66 ; H01L29/45

Abstract:
A system and method for creating layout for non-planar cells with redundancy in one or more of output contacts and power contacts are described. In various implementations, cell layout is created for a first cell with non-planar devices. An available local path in the first cell is identified for redundant output signal routing, which includes a free available metal zero layer track. Redundant metal zero layer is placed in an available metal zero track of the available local path. Redundant contacts and redundant metal one layer are placed in a free track in the available local path to connect an original output contact to a redundant output contact. An available external path is identified between the first cell and a second cell for redundant power or ground routing. One or more metal zero extension layers and/or metal one extension layers are placed in the identified external path.
Public/Granted literature
- US20200035662A1 METAL ZERO CONTACT VIA REDUNDANCY ON OUTPUT NODES AND INSET POWER RAIL ARCHITECTURE Public/Granted day:2020-01-30
Information query
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