Invention Grant
- Patent Title: Semiconductor device manufacturing method including forming a wide portion spreading over a looped portion
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Application No.: US16385669Application Date: 2019-04-16
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Publication No.: US10651121B2Publication Date: 2020-05-12
- Inventor: Daisuke Oya , Satoshi Yokota
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1191f9c7
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L23/00 ; H01L23/053 ; H01L23/498 ; H01R4/06 ; H01L23/34 ; H01R4/30 ; H01R4/48 ; H01R4/56 ; H01R12/70
Abstract:
A semiconductor device includes a semiconductor chip, an electrode electrically connected to the semiconductor chip, the electrode including a looped portion, a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion, and a case for the semiconductor chip and the electrode, the case contacting the main portion while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed.
Public/Granted literature
- US20190244889A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2019-08-08
Information query
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