Invention Grant
- Patent Title: Method for fabricating a doped zone in a semiconductor body
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Application No.: US11232735Application Date: 2005-09-22
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Publication No.: US10651037B2Publication Date: 2020-05-12
- Inventor: Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Holger Schulze
- Applicant: Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Holger Schulze
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@112fac57
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/66 ; H01L21/304 ; H01L29/10 ; H01L21/324 ; H01L21/263 ; H01L29/08
Abstract:
One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.
Public/Granted literature
- US20060073684A1 Method for fabricating a doped zone in a semiconductor body Public/Granted day:2006-04-06
Information query
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