Invention Grant
- Patent Title: Substrate processing method
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Application No.: US15378590Application Date: 2016-12-14
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Publication No.: US10651012B2Publication Date: 2020-05-12
- Inventor: Akihiro Yokota , Etsuji Ito , Shinji Himori
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f93ffc8
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/32 ; H01L21/768 ; H01L21/3065 ; C23C14/35 ; C23C14/54 ; H01L21/67

Abstract:
A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.
Public/Granted literature
- US20170162367A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2017-06-08
Information query
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