Examples described in this disclosure relate to a memory cell with Josephson phase-based torque. In one example, a memory cell including a first inductor and a magnetic Josephson junction (MJJ) coupled to the first inductor to form a loop is provided. The MJJ may include a free magnetic layer formed above a non-magnetic layer, and a fixed magnetic layer below the non-magnetic layer. A first state of the memory cell corresponds to a first magnetization of the free magnetic layer that is parallel to a magnetization of the fixed magnetic layer and the second state of the memory cell corresponds to a second magnetization of the free magnetic layer that is anti-parallel to the magnetization of the fixed magnetic layer. The memory cell is configured to switch from the first state to the second state based on whether the MJJ is in a zero-state or a π-state.