Invention Grant
- Patent Title: Adaptive modulation scheme of MOSFET driver key parameters for improved voltage regulator efficiency and system reliability
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Application No.: US15491561Application Date: 2017-04-19
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Publication No.: US10594313B2Publication Date: 2020-03-17
- Inventor: Kejiu Zhang , Shiguo Luo , Ralph H. Johnson
- Applicant: Dell Products L.P.
- Applicant Address: US TX Round Rock
- Assignee: Dell Products L.P.
- Current Assignee: Dell Products L.P.
- Current Assignee Address: US TX Round Rock
- Agency: Baker Botts L.L.P.
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/082 ; H02M1/38 ; H02M1/08

Abstract:
Systems and methods for adaptive modulation of MOSFET driver key parameters for improved voltage regulator efficiency and reliability in a voltage regulator may include a power stage. The power stage may include a high side switch including a high side gate, a peak voltage detection circuit, and a high side driver strength modulator circuit. The high side driver strength modulator circuit may determine a high side driver strength level. The high side driver strength modulator circuit may also connect a subset of the set of high side gate drivers to the high side gate based on the high side driver strength level. The high side driver strength modulator circuit may also disconnect a remaining subset of the set of high side gate drivers from the high side gate.
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