Invention Grant
- Patent Title: Lateral insulated-gate bipolar transistor and method therefor
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Application No.: US15840426Application Date: 2017-12-13
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Publication No.: US10593796B2Publication Date: 2020-03-17
- Inventor: Zihao M. Gao , Christopher Paul Dragon , Walter Sherrard Wright
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/739 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L29/423 ; H01L29/08 ; H01L27/07
Abstract:
A transistor includes a substrate of a first conductivity type. An epitaxial layer of the first conductivity type is formed at a top surface of the substrate. A first region of the first conductivity type is formed as a well in the epitaxial layer. A second region of a second conductivity type is formed as a well in the epitaxial layer adjacent to the first region and the second conductivity type is opposite of the first conductivity type. A third region of the second conductivity type is formed in the first region and a portion of the first region forms a channel region between the third region and the second region. An emitter region of the first conductivity type is formed in the second region. A gate dielectric is formed over the channel region, and a gate electrode is formed on gate dielectric with the gate electrode overlapping at least a portion of second region and the third region.
Public/Granted literature
- US20190181262A1 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD THEREFOR Public/Granted day:2019-06-13
Information query
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