Invention Grant
- Patent Title: Diode connected vertical transistor
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Application No.: US16400133Application Date: 2019-05-01
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Publication No.: US10593669B2Publication Date: 2020-03-17
- Inventor: Karthik Balakrishnan , Pouya Hashemi , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L29/66 ; H01L29/78 ; H01L29/739 ; H01L21/8234 ; G11C7/06 ; G11C11/4091 ; H01L29/861

Abstract:
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.
Public/Granted literature
- US20190259750A1 DIODE CONNECTED VERTICAL TRANSISTOR Public/Granted day:2019-08-22
Information query
IPC分类: