Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15910425Application Date: 2018-03-02
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Publication No.: US10593617B2Publication Date: 2020-03-17
- Inventor: Hiroshi Ashikaga , Naoki Kimura
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-179056 20170919
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/498 ; H01L25/065 ; H01L23/544 ; H01L23/31 ; H01L23/00

Abstract:
According to one embodiment, a semiconductor device includes a first board including a plurality of terminals, a semiconductor chip flip-chip mounted to the first board, and an insulating layer covering the first board and the semiconductor chip. The plurality of terminals include at least one first terminal electrically connected to the semiconductor chip, and at least one second terminal that is not connected to the semiconductor chip, wherein the at least one second terminal is not covered by the insulating layer.
Public/Granted literature
- US20190088583A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-03-21
Information query
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