Invention Grant
- Patent Title: Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus
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Application No.: US15654307Application Date: 2017-07-19
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Publication No.: US10593556B2Publication Date: 2020-03-17
- Inventor: Koichi Yatsuda , Takashi Hayakawa , Hiroshi Okuno , Reiji Niino , Hiroyuki Hashimoto , Tatsuya Yamaguchi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2016-143265 20160721; JP2016-251394 20161226
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/67 ; H01L21/768 ; H01L21/02 ; H01L23/532
Abstract:
There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.
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Information query
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