Invention Grant
- Patent Title: Method for doping semiconductor substrates by means of a co-diffusion process and doped semiconductor substrate produced by means of said method
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Application No.: US16063527Application Date: 2016-12-16
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Publication No.: US10593552B2Publication Date: 2020-03-17
- Inventor: Philip Rothhardt , Andreas Wolf , Sebastian Meier , Daniel Biro , Sabrina Lohmüller
- Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V.
- Applicant Address: DE München
- Assignee: Fraunhofer-Gesellschaft Zur Förderung der Angewandten Forschung E.V
- Current Assignee: Fraunhofer-Gesellschaft Zur Förderung der Angewandten Forschung E.V
- Current Assignee Address: DE München
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: DE102015226516 20151222
- International Application: PCT/EP2016/081335 WO 20161216
- International Announcement: WO2017/108592 WO 20170629
- Main IPC: H01L21/223
- IPC: H01L21/223 ; H01L21/225 ; H01L31/18 ; H01L29/36
Abstract:
The invention relates to a method for doping semiconductor substrates by means of a co-diffusion process. First, semiconductor substrates are coated at least on one side with a layer containing at least one first dopant. Two of said substrates in each case are arranged in a process chamber in such a way that two of the coated sides thereof are brought in direct contact.
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