Invention Grant
- Patent Title: Power semiconductor device with built-in resistor between control electrode and control terminal, and power semiconductor drive system
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Application No.: US15899596Application Date: 2018-02-20
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Publication No.: US10587181B2Publication Date: 2020-03-10
- Inventor: Kazufumi Ishii
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2017-086207 20170425
- Main IPC: H02M1/084
- IPC: H02M1/084

Abstract:
Each of a plurality of semiconductor elements is provided with a first control terminal and a second control terminal. A built-in gate resistor is connected between the semiconductor element and the first control terminal. Individual voltage pulse signals are input to the second control terminals when the plurality of semiconductor elements are individually turned on and off. A common voltage pulse signal is input to some of the first control terminals when a first group of semiconductor elements is turned on and off in common. A common voltage pulse signal is input to others of the first control terminals when a second group of semiconductor elements is turned on and off in common.
Public/Granted literature
- US20180309386A1 POWER SEMICONDUCTOR DEVICE AND POWER SEMICONDUCTOR DRIVE SYSTEM Public/Granted day:2018-10-25
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