Invention Grant
- Patent Title: Gap between semiconductors
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Application No.: US16091598Application Date: 2017-04-06
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Publication No.: US10586881B2Publication Date: 2020-03-10
- Inventor: Alexander John Topping
- Applicant: POWER ROLL LIMITED
- Applicant Address: GB Sunderland
- Assignee: POWER ROLL LIMITED
- Current Assignee: POWER ROLL LIMITED
- Current Assignee Address: GB Sunderland
- Agency: Meunier Carlin & Curfman LLC
- Priority: GB1605917.2 20160407
- International Application: PCT/GB2017/050972 WO 20170406
- International Announcement: WO2017/174996 WO 20171012
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L31/0216 ; H01L31/0236 ; H01L31/047 ; H01L31/0224 ; H01L31/072

Abstract:
An optoelectronic device comprising a substrate comprising a groove having a first and a second side. The first and second sides of the groove are each coated with a conductor material and a semiconductor material. The semiconductor material on the first side of the groove and the conductor material on the second side of the groove are in contact with another semiconductor material in the groove. At the second side of the groove there is a gap between the semiconductor material on the second side of the groove and the another semiconductor material in the groove.
Public/Granted literature
- US20190088806A1 GAP BETWEEN SEMICONDUCTORS Public/Granted day:2019-03-21
Information query
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