Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15906477Application Date: 2018-02-27
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Publication No.: US10586776B2Publication Date: 2020-03-10
- Inventor: Yoichi Mimuro , Shinjiro Kato , Tetsuo Shioura
- Applicant: ABLIC Inc.
- Applicant Address: JP Chiba
- Assignee: ABLIC INC.
- Current Assignee: ABLIC INC.
- Current Assignee Address: JP Chiba
- Agency: Brinks Gilson & Lione
- Priority: JP2017-043156 20170307
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/02 ; H01L23/31 ; H01L21/78 ; H01L23/29 ; H01L21/311
Abstract:
A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon nitride film and the insulating film, formed at a position overlapped with a bonding portion of the aluminum alloy wiring, and a deposition made of a residue caused by reverse sputtering, which contains silicon and nitrogen, adheres to a portion exposed from the opening portion of a surface of the aluminum alloy wiring, to form a film.
Public/Granted literature
- US20180261562A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-09-13
Information query
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