Invention Grant
- Patent Title: Method of manufacturing quantum dot having tunable and narrow light emission wavelength for achieving high color purity and a method of manufacturing film
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Application No.: US15947537Application Date: 2018-04-06
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Publication No.: US10581008B2Publication Date: 2020-03-03
- Inventor: Jong Soo Lee , Parthiban Ramasamy
- Applicant: DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
- Applicant Address: KR Daegu
- Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
- Current Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
- Current Assignee Address: KR Daegu
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2017-0079391 20170622; KR10-2017-0175583 20171219
- Main IPC: H01L51/50
- IPC: H01L51/50 ; C09K11/02 ; C09K11/56 ; B82Y40/00 ; B82Y20/00 ; B82Y30/00

Abstract:
The present disclosure relates to a method of manufacturing a quantum dot having a tunable and narrow light emission wavelength for achieving a high color purity, which for example includes preparing a mixture by dissolving an indium precursor and a zinc precursor in an acid, forming an In(Zn)P-based core by adding a phosphorus compound to the mixture, forming a first shell coated on the In(Zn)P-based core by adding a selenium compound and the zinc precursor to the mixture, and forming a second shell coated on the first shell by adding a sulfur compound and the zinc precursor to the mixture and in which the first shell is formed of ZnSe and the second shell is formed of ZnS.
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