Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US15862089Application Date: 2018-01-04
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Publication No.: US10580965B2Publication Date: 2020-03-03
- Inventor: Junghoon Bak
- Applicant: Junghoon Bak
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2017-0008776 20170118
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L27/22 ; H01L43/10 ; G11C11/16 ; H01L43/12

Abstract:
A plurality of magnetic tunnel junction structures is arranged in rows and columns on a substrate. A plurality of top electrodes is disposed on the plurality of magnetic tunnel junction structures, respectively. A plurality of bit lines is disposed on the substrate. One of the plurality of bit lines is disposed between two magnetic tunnel junction structures, adjacent to each other, of the plurality of magnetic tunnel junction structures. A top surface of each of the plurality of bit lines is disposed at substantially the same level as a top surface of each of the plurality of top electrodes.
Public/Granted literature
- US20180205003A1 MAGNETIC MEMORY DEVICE Public/Granted day:2018-07-19
Information query
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