Invention Grant
- Patent Title: Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials
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Application No.: US15969252Application Date: 2018-05-02
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Publication No.: US10580703B2Publication Date: 2020-03-03
- Inventor: Takashi Ando , Choonghyun Lee , Jingyun Zhang , Pouya Hashemi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/49 ; H01L21/8238 ; H01L29/78 ; H01L29/51 ; H01L27/092
Abstract:
A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area.
Public/Granted literature
- US20190341314A1 MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS Public/Granted day:2019-11-07
Information query
IPC分类:
