Invention Grant
- Patent Title: Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks
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Application No.: US16001435Application Date: 2018-06-06
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Publication No.: US10579764B2Publication Date: 2020-03-03
- Inventor: Jing Sha , Ekmini A. De Silva , Derren N. Dunn
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06K9/62 ; G06N3/08

Abstract:
A method is presented for constructing a deep neural network based model to concurrently simulate post-lithography critical dimensions (CDs) and post-etch critical dimensions (CDs) and to improve the modeling accuracy of each process respectively. The method includes generating lithographic aerial images of physical design layout patterns, constructing a multi-task neural network including two output channels, training the multi-task neural network with the training data of the lithographic aerial images, and outputting simulated critical dimension values pertaining to lithography and etch processes.
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