Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US15604138Application Date: 2017-05-24
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Publication No.: US10579472B2Publication Date: 2020-03-03
- Inventor: Chang Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0106756 20160823
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G11C29/04

Abstract:
A semiconductor device may include an error correction circuit and a fuse signal generation circuit. The error correction circuit may be configured to generate a syndrome signal from data using an error correction code. The fuse signal generation circuit may be configured to receive the syndrome signal to generate a fuse signal for repairing a cell array storing the data.
Public/Granted literature
- US20180060165A1 SEMICONDUCTOR DEVICES Public/Granted day:2018-03-01
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