Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15051256Application Date: 2016-02-23
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Publication No.: US10579302B2Publication Date: 2020-03-03
- Inventor: Hiroki Nakata , Manabu Matsumoto
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2015-206533 20151020
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/06 ; G06F12/02 ; G06F13/16 ; G06F13/40 ; G06F13/42

Abstract:
A semiconductor device includes a first substrate on which an interface unit connectable to a host device is provided, a first memory module on the first substrate, and a first controller on the first substrate. The first controller includes a control unit that controls the first memory module, and a switching unit that switches an operation mode in response to a command from the host device. A first connecting portion is provided on the first substrate and is electrically connected to the first memory module and the first controller. The first controller can directly access a second memory module through the first connecting portion. Thus, for example the first controller can read data stored in the second memory module depending on operation mode.
Public/Granted literature
- US20170109098A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-04-20
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