Invention Grant
- Patent Title: Magnetic field sensor having magnetoresistance elements with opposite bias directions
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Application No.: US15895418Application Date: 2018-02-13
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Publication No.: US10578684B2Publication Date: 2020-03-03
- Inventor: Bryan Cadugan , Rémy Lassalle-Balier , Alexander Latham , Paolo Campiglio , Noémie Belin
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester
- Assignee: Allegro MicroSystems, LLC
- Current Assignee: Allegro MicroSystems, LLC
- Current Assignee Address: US NH Manchester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G01R15/20 ; G01R33/00

Abstract:
A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.
Public/Granted literature
- US20190219643A1 Magnetic Field Sensor Having Magnetoresistance Elements with Opposite Bias Directions Public/Granted day:2019-07-18
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