Invention Grant
- Patent Title: Insulated gate bipolar transistor
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Application No.: US16171535Application Date: 2018-10-26
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Publication No.: US10566448B2Publication Date: 2020-02-18
- Inventor: Tohru Shirakawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2017-237922 20171212
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/08 ; H01L29/10 ; H01L29/40 ; H01L29/06 ; H01L29/423 ; H01L29/417
Abstract:
An IGBT includes current sense cell having a sensing area for sensing a current flowing an active area and an extraction area for extracting a hole current. The extraction area around the sensing area, has a portion in a gate trench is not in contact with the emitter region, and a p-type well region provided deeper than the first trench and having a high impurity concentration. An area of the extraction area is four times or more and 10,000 times or less an area of the sensing area.
Public/Granted literature
- US20190181252A1 INSULATED GATE BIPOLAR TRANSISTOR Public/Granted day:2019-06-13
Information query
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