Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US15788933Application Date: 2017-10-20
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Publication No.: US10566382B2Publication Date: 2020-02-18
- Inventor: Ji Hye Yeon , Han Kyu Seong , Wan Tae Lim , Sung Hyun Sim , Hanul Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee IP Law, P.C.
- Priority: KR10-2017-0041710 20170331
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/50 ; H01L33/62 ; H01L33/38 ; H01L33/22 ; H01L33/00 ; H01L33/32

Abstract:
A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
Public/Granted literature
- US20180286915A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2018-10-04
Information query
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