Invention Grant
- Patent Title: FinFET with stacked faceted S/D epitaxy for improved contact resistance
-
Application No.: US15980197Application Date: 2018-05-15
-
Publication No.: US10566349B2Publication Date: 2020-02-18
- Inventor: Karthik Balakrishnan , Kangguo Cheng , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L21/311 ; H01L21/762 ; H01L21/84 ; H01L29/04 ; H01L29/08
Abstract:
A semiconductor structure including a multi-faceted epitaxial semiconductor structure within both a source region and a drain region and on exposed surfaces of a semiconductor fin is provided. The multi-faceted epitaxial semiconductor structure includes faceted epitaxial semiconductor material portions located on different portions of each vertical sidewall of the semiconductor fin and a topmost faceted epitaxial semiconductor material portion that is located on an exposed topmost horizontal surface of the semiconductor fin. The multi-faceted epitaxial semiconductor structure has increased surface area and thus an improvement in contact resistance can be obtained utilizing the same.
Public/Granted literature
- US20180261630A1 FINFET WITH STACKED FACETED S/D EPITAXY FOR IMPROVED CONTACT RESISTANCE Public/Granted day:2018-09-13
Information query
IPC分类:
