Invention Grant
- Patent Title: Semiconductor memory devices including a stress relief region
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Application No.: US15805760Application Date: 2017-11-07
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Publication No.: US10566342B2Publication Date: 2020-02-18
- Inventor: Sung-Min Hwang , Jang-Gn Yun , Joon-Sung Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0027808 20170303
- Main IPC: H01L27/11575
- IPC: H01L27/11575 ; H01L27/11524 ; H01L27/11556 ; H01L27/11529 ; H01L27/11548 ; H01L27/11582 ; H01L27/11573 ; H01L23/00 ; G11C16/26 ; G11C16/10 ; H01L27/1157 ; G11C16/08

Abstract:
Semiconductor memory devices are provided. A semiconductor memory device includes a memory cell region and an insulator on a portion of the memory cell region. The semiconductor memory device includes a stress relief material that is in the insulator and is between the memory cell region and another region of the semiconductor memory device.
Public/Granted literature
- US20180254284A1 SEMICONDUCTOR MEMORY DEVICES INCLUDING A STRESS RELIEF REGION Public/Granted day:2018-09-06
Information query
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