Invention Grant
- Patent Title: Integrated gate resistors for semiconductor power conversion devices
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Application No.: US15599119Application Date: 2017-05-18
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Publication No.: US10566324B2Publication Date: 2020-02-18
- Inventor: Peter Almern Losee , Alexander Viktorovich Bolotnikov
- Applicant: General Electric Company
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/06 ; H01L29/16 ; H01L23/64 ; H01L21/82

Abstract:
A semiconductor power conversion device includes a plurality of device cells in different portions of the active area, each including a respective gate electrode. The device includes a gate pad having a plurality of integrated resistors, each having a respective resistance. The device includes a first gate bus extending between the gate pad and the plurality of gate electrodes in a first portion of the active area. The plurality of gate electrodes in the first area is electrically connected to an external gate connection via a first integrated resistor and the first gate bus, and wherein the plurality of gate electrodes in a second portion of the active area is electrically connected to the external gate connection via a second integrated resistor, wherein the first and second integrated resistors have substantially different respective resistance values.
Public/Granted literature
- US20180337171A1 INTEGRATED GATE RESISTORS FOR SEMICONDUCTOR POWER CONVERSION DEVICES Public/Granted day:2018-11-22
Information query
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