Invention Grant
- Patent Title: Alignment mark and measurement method thereof
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Application No.: US15715184Application Date: 2017-09-26
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Publication No.: US10566290B2Publication Date: 2020-02-18
- Inventor: Chia-Chen Sun , Yu-Cheng Tung , Sheng-Yuan Hsueh , Fan-Wei Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106129108A 20170828
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/66 ; G01B21/24 ; G03F7/20 ; G01B21/20 ; G03F9/00

Abstract:
The present invention provides an alignment mark, the alignment mark includes at least one dummy mark pattern in a first layer comprises a plurality of dummy mark units arranged along a first direction, and at least one first mark pattern located in a second layer disposed above the first layer, the first mark pattern comprises a plurality of first mark units, each of the first mark units being arranged in a first direction. When viewed in a top view, the first mark pattern completely covers the dummy mark pattern, and the size of each dummy mark unit is smaller than each first mark unit. In addition, each dummy mark unit of the dummy mark pattern has a first width, each first mark unit of the first mark pattern has a second width, and the first width is smaller than half of the second width.
Public/Granted literature
- US20190067204A1 ALIGNMENT MARK AND MEASUREMENT METHOD THEREOF Public/Granted day:2019-02-28
Information query
IPC分类: