A method for forming a multi-level stack having a multi-level contact is provided. The method includes forming a multi-level stack comprising a specified number, n, of conductive layers and at least n−1 insulating layers. A via formation layer is formed over the stack. A first via is etched in the via formation layer at a first edge of the stack. A first multi-level contact is formed in the first via. For a particular embodiment, a second via may be etched in the via formation layer at a second edge of the stack and a second multi-level contact may be formed in the second via.