Invention Grant
- Patent Title: Post-etch treatment of an electrically conductive feature
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Application No.: US15653368Application Date: 2017-07-18
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Publication No.: US10566232B2Publication Date: 2020-02-18
- Inventor: Bo-Jhih Shen , Yi-Wei Chiu , Hung Jui Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L21/02 ; H01L21/285

Abstract:
Implementations of the present disclosure provide methods for preventing contact damage or oxidation after via/trench opening formation. In one example, the method includes forming an opening in a structure on the substrate to expose a portion of a surface of an electrically conductive feature, and bombarding a surface of a mask layer of the structure using energy species formed from a plasma to release reactive species from the mask layer, wherein the released reactive species form a barrier layer on the exposed surface of the electrically conductive feature.
Public/Granted literature
- US20180337090A1 POST-ETCH TREATMENT OF AN ELECTRICALLY CONDUCTIVE FEATURE Public/Granted day:2018-11-22
Information query
IPC分类: