Invention Grant
- Patent Title: Heater for semiconductor manufacturing apparatus
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Application No.: US16222001Application Date: 2018-12-17
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Publication No.: US10566228B2Publication Date: 2020-02-18
- Inventor: Keita Yamana , Kazuhiro Nobori , Kengo Torii
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2018-020637 20180208
- Main IPC: H01L21/683
- IPC: H01L21/683 ; C04B35/645 ; C04B35/581
Abstract:
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
Public/Granted literature
- US20190244847A1 HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2019-08-08
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