Invention Grant
- Patent Title: Sense amplifier and semiconductor memory apparatus using the sense amplifier
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Application No.: US16201426Application Date: 2018-11-27
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Publication No.: US10566035B2Publication Date: 2020-02-18
- Inventor: Seung Han Oak , Sang Hyun Ku
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2018-0030758 20180316
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/08

Abstract:
A sense amplifier includes a latch type sense unit that detects a voltage difference between a bit line and a bit line bar and causes a voltage difference between a first latch output node and a second latch output node. The sense amplifier further includes a first latch connection unit that electrically connects the bit line to and disconnects the bit line from the first latch output node.
Public/Granted literature
- US20190287578A1 SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY APPARATUS USING THE SENSE AMPLIFIER Public/Granted day:2019-09-19
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