A structure, a semiconductor device and a manufacturing method thereof are provided. The structure includes a core dielectric layer, a patterned conductive plate, a metallization layer, an upper build-up stack and a lower dielectric layer. The patterned conductive plate has ducts there-through and is entrenched in the core dielectric layer. The metallization layer is disposed within the ducts and further extends over an upper surface and a bottom surface of the core dielectric layer. The upper build-up stack is disposed on the upper surface of the core dielectric layer. The upper build-up stack includes conductive layers electrically connected to the metallization layer. The lower dielectric layer is disposed on the bottom surface of the core dielectric layer and is in direct physical contact with a bottom surface of the patterned conductive plate. A material of the lower dielectric layer is different from a material of the core dielectric layer.