• Patent Title: High figure of merit p-type FeNbHfSb thermoelectric materials and the preparation method thereof
  • Application No.: US15539316
    Application Date: 2015-07-16
  • Publication No.: US10553771B2
    Publication Date: 2020-02-04
  • Inventor: Tiejun ZhuChenguang FuXinbing Zhao
  • Applicant: ZHEJIANG UNIVERSITY
  • Applicant Address: CN Hangzhou
  • Assignee: ZHEJIANG UNIVERSITY
  • Current Assignee: ZHEJIANG UNIVERSITY
  • Current Assignee Address: CN Hangzhou
  • Agent Jiwen Chen
  • Priority: CN201510073138 20150212
  • International Application: PCT/CN2015/084262 WO 20150716
  • International Announcement: WO2016/127572 WO 20160818
  • Main IPC: H01L35/18
  • IPC: H01L35/18 C22C1/04 C22C30/00
High figure of merit p-type FeNbHfSb thermoelectric materials and the preparation method thereof
Abstract:
The present invention discloses a type of high figure of merit p-type FeNbHfSb thermoelectric material, whose composition is FeNb1-xHfxSb, wherein x=0.06˜0.2. The present invention also discloses the method to prepare these p-type FeNbHfSb thermoelectric materials. The ingots with nominal composition FeNb1-xHfxSb are prepared by levitation melting of stoichiometric amounts of Fe, Nb, Hf and Sb under an argon atmosphere. The obtained ingots are mechanically milled to get submicron-scale powders. The obtained powders are compacted by spark plasma sintering to obtain the final bulk p-type FeNbHfSb thermoelectric materials. The compositional elements of these p-type FeNbHfSb thermoelectric materials are abundant in the earth crust. The p-type thermoelectric materials also shows good high temperature stability and the preparation method are simple and high-yield. Therefore, the industrial production cost would be relatively cheap. The maximum zT value of the p-type thermoelectric materials is ˜1.45 at 1200K, which is the highest value among the p-type half-Heusler system.
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