Invention Grant
- Patent Title: High figure of merit p-type FeNbHfSb thermoelectric materials and the preparation method thereof
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Application No.: US15539316Application Date: 2015-07-16
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Publication No.: US10553771B2Publication Date: 2020-02-04
- Inventor: Tiejun Zhu , Chenguang Fu , Xinbing Zhao
- Applicant: ZHEJIANG UNIVERSITY
- Applicant Address: CN Hangzhou
- Assignee: ZHEJIANG UNIVERSITY
- Current Assignee: ZHEJIANG UNIVERSITY
- Current Assignee Address: CN Hangzhou
- Agent Jiwen Chen
- Priority: CN201510073138 20150212
- International Application: PCT/CN2015/084262 WO 20150716
- International Announcement: WO2016/127572 WO 20160818
- Main IPC: H01L35/18
- IPC: H01L35/18 ; C22C1/04 ; C22C30/00

Abstract:
The present invention discloses a type of high figure of merit p-type FeNbHfSb thermoelectric material, whose composition is FeNb1-xHfxSb, wherein x=0.06˜0.2. The present invention also discloses the method to prepare these p-type FeNbHfSb thermoelectric materials. The ingots with nominal composition FeNb1-xHfxSb are prepared by levitation melting of stoichiometric amounts of Fe, Nb, Hf and Sb under an argon atmosphere. The obtained ingots are mechanically milled to get submicron-scale powders. The obtained powders are compacted by spark plasma sintering to obtain the final bulk p-type FeNbHfSb thermoelectric materials. The compositional elements of these p-type FeNbHfSb thermoelectric materials are abundant in the earth crust. The p-type thermoelectric materials also shows good high temperature stability and the preparation method are simple and high-yield. Therefore, the industrial production cost would be relatively cheap. The maximum zT value of the p-type thermoelectric materials is ˜1.45 at 1200K, which is the highest value among the p-type half-Heusler system.
Public/Granted literature
- US20180331268A1 HIGH FIGURE OF MERIT P-TYPE FeNbHfSb THERMOELECTRIC MATERIALS AND THE PREPARATION METHOD THEREOF Public/Granted day:2018-11-15
Information query
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